Microwave Irradiation Effects on MOSFET Circuits, Related to ISM Applications
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Selly Ezra, Eli Jerby*
In this study, we examine the impact of microwave irradiation on metal-oxide-semiconductor field-effect-transistors (MOSFET’s). In view of the broad literature in this field, this study is oriented to industrial, scientific and medical (ISM) applications. The specific objectives of this study are (a) to identify interferences of microwave leaks from ISM installations to nearby electronic circuits, and (b) to develop low-cost MOSFET detectors for ISM applications. The experimental setup consists of a controlled exposure chamber, in which various MOSFET components and circuits are examined in a range of operating conditions and modulation patterns at ISM frequencies. A custom automated control is developed and employed to systematically scan the parametric spaces across different circuit configurations and experimental conditions. Spurious signals induced by nonlinear effects due to microwave leaks, which may cause functional disruptions, are presented and discussed.
Keywords: Microwave heating, MOSFET, Electromagnetic interference, ISM.
Proscience vol. 10
Pp 24-28